Photostimulated relaxation of internal mechanical stresses in epitaxial SOS structures

被引：1
|
作者：
Jibuti, Z. V. [1 ]
Dolidze, N. D. [1 ]
Eristavi, G. L. [1 ]
机构：
[1] Dzhavakhishvili State Univ, GE-0179 Tbilisi, Georgia
来源：
TECHNICAL PHYSICS | 2008年 / 53卷 / 06期
关键词：
61.72.-y; 78.20.-e; 61.80.B;
D O I：
10.1134/S106378420806025X
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The nature of internal mechanical stresses in the thin silicon-on-sapphire (SOS) epitaxial films is studied, and their value is estimated. They are similar to 10(19) Pa and have a compressive character. The effects of pulsed laser and lamp annealings on stress relaxation are analyzed, and stress relaxation is shown to reach 90% under certain annealing conditions. An electron mechanism, which is based on a change in the quantum state of the electron subsystem of a crystal during pulsed photon annealing, is proposed for annealing of structural defects.
引用
收藏
页码：808 / 810
页数：3
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