Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors

被引：21
|
作者：
Jolley, G. [1 ]
Tan, L. Fu H. H. [1 ]
Jagadish, C. [1 ]
机构：
[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 17期
基金：
澳大利亚研究理事会;
关键词：
Semiconductor quantum wells;
D O I：
10.1063/1.2802559
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the spectral behavior of two different quantum dots-in-a-well infrared photodetectors grown by low- pressure metal-organic chemical vapor deposition. In0.5Ga0.5As quantum dots embedded in an In0.15Ga0.85As/GaAs quantum well (QW) or a GaAs/Al0.2Ga0.8As QW have been incorporated into photodetectors and were characterized. A spectral response in the 3-5 mu m atmospheric window has been achieved by adopting the GaAs/Al0.2Ga0.8As QW. (C) 2007 American Institute of Physics.
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页数：3
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