Irradiation effects in 6H-SiC induced by neutron and heavy ions: Raman spectroscopy and high-resolution XRD analysis

被引：42

作者：

Chen, Xiaofei ^{[1
]}

Zhou, Wei ^{[2
]}

Feng, Qijie ^{[2
]}

Zheng, Jian ^{[2
]}

Liu, Xiankun ^{[2
]}

Tang, Bin ^{[2
]}

Li, Jiangbo ^{[2
]}

Xue, Jianming ^{[1
]}

Peng, Shuming ^{[2
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Nucl Phys & Technol, Beijing 100871, Peoples R China

[2] China Acad Engn Phys, Inst Nucl Phys & Chem, Mianyang 621900, Peoples R China

来源：

JOURNAL OF NUCLEAR MATERIALS | 2016年 / 478卷

关键词：

SiC; Neutron irradiation; Ion irradiation; Total disorder; Lattice strain; BEAM-INDUCED AMORPHIZATION; DAMAGE PRODUCTION; DOSE DEPENDENCE; SILICON-CARBIDE; MICROSTRUCTURE; TEMPERATURE; PROTON; 6H; SCATTERING; EMULATION;

D O I：

10.1016/j.jnucmat.2016.06.020

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Irradiation effects of neutron and 3 MeV C+, Si+ in 6H-SiC were investigated by Raman spectroscopy and high-resolution XRD. The total disorder values of neutron irradiated SiC agree well with that of samples irradiated by ions at the same doses respectively. On the other hand, high-resolution XRD results shows that the lattice strain rate caused by neutron irradiation is 6.8%/dpa, while it is only 2.6%/dpa and 4.2%/dpa for Si+ and C+ irradiations respectively. Our results illustrate that the total disorder in neutron irradiated SiC can be accurately simulated by MeV Si+ or C+ irradiations at the same dose, but for the lattice strain and strain-related properties like surface hardness, the depth profile of irradiation damages induced by energetic ions must be considered. This research will contribute to a better understanding of the difference in irradiation effects between neutron and heavy ions. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：215 / 221

页数：7

共 50 条

[21] Native and electron irradiation induced defects in 6H-SiC
Friessnegg, T
Dannefaer, S
DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 721 - 726
[22] HIGH-RESOLUTION ELECTRON-MICROSCOPY OF NEUTRON-IRRADIATION-INDUCED DISLOCATIONS IN SIC
YANO, T
ISEKI, T
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1990, 62 (04): : 421 - 430
[23] 4H-SiC/6H-SiC interface structures studied by high-resolution transmission electron microscopy
1600, (63):
[24] Charge Enhancement Effects in 6H-SiC MOSFETs Induced by Heavy Ion Strike
Onoda, Shinobu
Makino, Takahiro
Iwamoto, Naoya
Vizkelethy, Gyorgy
Kojima, Kazutoshi
Nozaki, Shinji
Ohshima, Takeshi
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (06) : 3373 - 3379
[25] Analysis of ion beam induced damage and amorphization of 6H-SiC by Raman scattering
PerezRodriguez, A
Pacaud, Y
CalvoBarrio, L
Serre, C
Skorupa, W
Morante, JR
JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (03) : 541 - 547
[26] Electrical characteristics and neutron irradiation response model of 6H-SiC JFET
Shang, Yechun
Zhang, Yimen
Zhang, Yuming
Hedianzixue Yu Tance Jishu/Nuclear Electronics & Detection Technology, 2000, 20 (06): : 424 - 428
[27] High resolution electron energy loss spectroscopy of √3×√3 6H-SiC(0001)
Takahashi, Kunimasa
Uchida, Masao
Kitabatake, Makoto
Materials Science Forum, 2000, 338
[28] 4H-SIC/6H-SIC INTERFACE STRUCTURES STUDIED BY HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY
IWASAKI, H
INOUE, S
YOSHINOBU, T
TARUTANI, M
TAKAI, Y
SHIMIZU, R
ITO, A
KIMOTO, T
MATSUNAMI, H
APPLIED PHYSICS LETTERS, 1993, 63 (19) : 2636 - 2637
[29] Transient Response to High Energy Heavy Ions in 6H-SiC n+p Diodes
Onoda, S.
Ohshima, T.
Hirao, T.
Hishiki, S.
Iwamoto, N.
Kojima, K.
Kawano, K.
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 1039 - +
[30] Mechanical properties of 6H-SiC irradiated by neutron and MeV heavy ions: A nanoindentation and finite element method study
Chen, Xiaofei
Zhou, Wei
Zhang, Xuxin
Feng, Qijie
Zheng, Jian
Liu, Xiankun
Tang, Bin
Li, Jiangbo
Xue, Jianming
Peng, Shuming
JOURNAL OF APPLIED PHYSICS, 2018, 123 (02)

← 1 2 3 4 5 →