Irradiation effects in 6H-SiC induced by neutron and heavy ions: Raman spectroscopy and high-resolution XRD analysis

被引：42
|
作者：
Chen, Xiaofei [1 ]
Zhou, Wei [2 ]
Feng, Qijie [2 ]
Zheng, Jian [2 ]
Liu, Xiankun [2 ]
Tang, Bin [2 ]
Li, Jiangbo [2 ]
Xue, Jianming [1 ]
Peng, Shuming [2 ]
机构：
[1] Peking Univ, Sch Phys, State Key Lab Nucl Phys & Technol, Beijing 100871, Peoples R China
[2] China Acad Engn Phys, Inst Nucl Phys & Chem, Mianyang 621900, Peoples R China
来源：
JOURNAL OF NUCLEAR MATERIALS | 2016年 / 478卷
关键词：
SiC; Neutron irradiation; Ion irradiation; Total disorder; Lattice strain; BEAM-INDUCED AMORPHIZATION; DAMAGE PRODUCTION; DOSE DEPENDENCE; SILICON-CARBIDE; MICROSTRUCTURE; TEMPERATURE; PROTON; 6H; SCATTERING; EMULATION;
D O I：
10.1016/j.jnucmat.2016.06.020
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Irradiation effects of neutron and 3 MeV C+, Si+ in 6H-SiC were investigated by Raman spectroscopy and high-resolution XRD. The total disorder values of neutron irradiated SiC agree well with that of samples irradiated by ions at the same doses respectively. On the other hand, high-resolution XRD results shows that the lattice strain rate caused by neutron irradiation is 6.8%/dpa, while it is only 2.6%/dpa and 4.2%/dpa for Si+ and C+ irradiations respectively. Our results illustrate that the total disorder in neutron irradiated SiC can be accurately simulated by MeV Si+ or C+ irradiations at the same dose, but for the lattice strain and strain-related properties like surface hardness, the depth profile of irradiation damages induced by energetic ions must be considered. This research will contribute to a better understanding of the difference in irradiation effects between neutron and heavy ions. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：215 / 221
页数：7
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