Atomic-level fluctuation mechanism of the fracture of solids (computer simulation studies)

被引:20
|
作者
Slutsker, AI [1 ]
机构
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
关键词
D O I
10.1134/1.1924836
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Experimental studies of the fracture kinetics of solids have shown that the process culminating in fracture of a stressed solid comprises a sequence of elementary events in which stressed atomic bonds are ruptured by local energy fluctuations. This recognition sparked investigations into elementary fracture events and into the fluctuations themselves that are responsible for bond rupture. Currently, only computer simulation of the dynamics of atoms offers the possibility of tracing, in considerable detail, the evolution of fluctuation events characterized by very short duration (∼ 10(-13)-10(-12) s). An analysis is made of the results obtained in computer simulation experiments on the temporal and spatial localization of atomic-energy fluctuations and atomic-bond strains, fluctuation migration, the mechanism of fluctuation formation, the role of anharmonicity in atomic interactions, and the magnitude of the volume activated in an elementary fracture event. © 2005 Pleiades Publishing, Inc.
引用
收藏
页码:801 / 811
页数:11
相关论文
共 50 条
  • [21] Effect of Temperature on the Friction and Wear of PTFE by Atomic-Level Simulation
    Peter R. Barry
    Patrick Y. Chiu
    Scott S. Perry
    W. Gregory Sawyer
    Susan B. Sinnott
    Simon R. Phillpot
    Tribology Letters, 2015, 58
  • [22] Effect of Temperature on the Friction and Wear of PTFE by Atomic-Level Simulation
    Barry, Peter R.
    Chiu, Patrick Y.
    Perry, Scott S.
    Sawyer, W. Gregory
    Sinnott, Susan B.
    Phillpot, Simon R.
    TRIBOLOGY LETTERS, 2015, 58 (03)
  • [23] Atomic-level mechanism for isothermal crystallization in supercooled liquid tantalum
    Wen Da-Dong
    Deng Yong-He
    Dai Xiong-Ying
    Wu An-Ru
    Tian Ze-An
    ACTA PHYSICA SINICA, 2020, 69 (19)
  • [24] Atomic-level simulation of ferroelectricity in oxides: Current status and opportunities
    Phillpot, Simon R.
    Sinnott, Susan B.
    Asthagiri, Aravind
    ANNUAL REVIEW OF MATERIALS RESEARCH, 2007, 37 : 239 - 270
  • [25] Atomic-level simulation of epitaxial recrystallization and phase transformation in SiC
    Gao, F
    Devanathan, R
    Zhang, Y
    Posselt, M
    Weber, WJ
    JOURNAL OF MATERIALS RESEARCH, 2006, 21 (06) : 1420 - 1426
  • [26] Atomic-level simulation of epitaxial recrystallization and phase transformation in SiC
    Gao F.
    Devanathan R.
    Zhang Y.
    Posselt M.
    Weber W.J.
    Journal of Materials Research, 2006, 21 (6) : 1420 - 1426
  • [27] STRUCTURAL CHARACTERIZATION OF POLYCARBONATES FOR MEMBRANE APPLICATIONS BY ATOMIC-LEVEL SIMULATION
    GENTILE, FT
    ARIZZI, S
    SUTER, UW
    LUDOVICE, PJ
    INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH, 1995, 34 (12) : 4193 - 4201
  • [28] COMPUTER-SIMULATION STUDIES OF SOLIDS
    KLEIN, ML
    ANNUAL REVIEW OF PHYSICAL CHEMISTRY, 1985, 36 : 525 - 548
  • [29] Fracture of silicate glasses: Microcavities and correlations between atomic-level properties
    Zhang, Zhen
    Ispas, Simona
    Kob, Walter
    PHYSICAL REVIEW MATERIALS, 2022, 6 (08)
  • [30] Framework for atomic-level characterisation of quantum computer arrays by machine learning
    Muhammad Usman
    Yi Zheng Wong
    Charles D. Hill
    Lloyd C. L. Hollenberg
    npj Computational Materials, 6