Measurement of Lattice Temperature at Super Junction Planar Gate IGBT Comparing with Conventional Planar Gate IGBT

Power semiconductors, which is used to electrical switches that demand high breakdown voltage, low on-resistance and high switching speed, have been important devices in modern industry for saving energy. As Power devices control high current level, it generates wholesale heat. Since high temperature changes electrical characteristics of Power device, heat degrades reliability and operation of Power device. Therefore thermal analysis plays an important role in reliability and rapid thermal emission and low heat generation has a good effect on reliability of Power devices. This paper makes a comparison between thermal characteristic of Super junction IGBT and that of conventional IGBT. Thermal analysis is performed by lattice temperature in on state for a gate bias of 10V.