Modeling of field dependent Maxwell-Wagner interfacial capacitance for bilayer metal-insulator-metal capacitors

被引：1
|
作者：
Kannadassan, D. [1 ]
Mallick, P. S. [1 ]
机构：
[1] VIT Univ, Vellore 15, Tamil Nadu, India
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2017年 / 59卷 / 12期
关键词：
anodization; frequency dependant capacitance; high-k; MIM capacitor; voltage linearity; NONLINEARITY;
D O I：
10.1002/mop.30865
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we have presented the modeling of field dependent Maxwell-Wagner interfacial capacitance for bilayer metal-insulator-metal (MIM) capacitors. The model was verified with measured capacitance-voltage characteristics of fabricated bilayer Al2O3/TiO2 MIM capacitors. The model reveals the origin of voltage linearity of MIM capacitors at low frequencies (<10kHz). The proposed model for bilayer/multilayer MIM capacitors is very useful tool to design circuits for mixed signal, analog and digital circuits with low variation of capacitance for change in voltage.
引用
收藏
页码：2965 / 2970
页数：6
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