Modeling of field dependent Maxwell-Wagner interfacial capacitance for bilayer metal-insulator-metal capacitors

被引：1

作者：

Kannadassan, D. ^{[1
]}

Mallick, P. S. ^{[1
]}

机构：

[1] VIT Univ, Vellore 15, Tamil Nadu, India

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2017年 / 59卷 / 12期

关键词：

anodization; frequency dependant capacitance; high-k; MIM capacitor; voltage linearity; NONLINEARITY;

D O I：

10.1002/mop.30865

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we have presented the modeling of field dependent Maxwell-Wagner interfacial capacitance for bilayer metal-insulator-metal (MIM) capacitors. The model was verified with measured capacitance-voltage characteristics of fabricated bilayer Al2O3/TiO2 MIM capacitors. The model reveals the origin of voltage linearity of MIM capacitors at low frequencies (<10kHz). The proposed model for bilayer/multilayer MIM capacitors is very useful tool to design circuits for mixed signal, analog and digital circuits with low variation of capacitance for change in voltage.

引用

页码：2965 / 2970

页数：6

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