X-ray investigation of polytype distribution in InAs nanowires during MBE growth

被引：0
|
作者：
Pietsch, U. [1 ]
Biermanns, A. [1 ]
Dimakis, E.
Geelhaar, L. [2 ]
Davydok, A. [1 ]
Takahashi, M. [3 ]
Sasaki, T. [3 ]
机构：
[1] Univ Siegen, Dept Phys, Siegen, Germany
[2] Paul Drude Inst Festkorperelekt, Berlin, Germany
[3] Japan Atom Energy Agcy, Tokai, Hyogo, Japan
来源：
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES | 2014年 / 70卷
关键词：
in-situ MBE growth; InAs nanowires; polytypes;
D O I：
10.1107/S2053273314092511
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
MS48.P10
引用
收藏
页码：C748 / C748
页数：1
相关论文
共 50 条
  • [21] X-ray diffraction investigation of single-crystal Co nanowires
    Meng, FB
    Hu, HN
    Li, YX
    Chen, GF
    Chen, JL
    Wu, GH
    ACTA PHYSICA SINICA, 2005, 54 (01) : 384 - 388
  • [22] X-ray diffraction studies of crystal structure and strain distribution in nanowires
    Stangl, Julian
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2016, 72 : S429 - S429
  • [23] X-ray diffraction study of strain distribution in oxidized Si nanowires
    Takeuchi, Teruaki
    Tatsumura, Kosuke
    Shimura, Takayoshi
    Ohdomari, Iwao
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (07)
  • [24] X-ray diffraction study of strain distribution in oxidized Si nanowires
    Takeuchi, Teruaki
    Tatsumura, Kosuke
    Shimura, Takayoshi
    Ohdomari, Iwao
    Journal of Applied Physics, 2009, 106 (07):
  • [25] X-ray measurements of the strain and shape of dielectric/metallic wrap-gated InAs nanowires
    Eymery, J.
    Favre-Nicolin, V.
    Froberg, L.
    Samuelson, L.
    APPLIED PHYSICS LETTERS, 2009, 94 (13)
  • [26] X-RAY TOPOGRAPHIC OBSERVATION OF POLYTYPE DISTRIBUTIONS IN SILICON CARBIDE
    TAKEI, WJ
    FRANCOMBE, MH
    BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (11): : 1589 - +
  • [27] Birnessite polytype systematics and identification by powder X-ray diffraction
    Drits, Victor A.
    Lanson, Bruno
    Gaillot, Anne-Claire
    AMERICAN MINERALOGIST, 2007, 92 (5-6) : 771 - 788
  • [28] RHEED transients during InAs quantum dot growth by MBE
    Shimomura, K.
    Shirasaka, T.
    Tex, D. M.
    Yamada, F.
    Kamiya, I.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2012, 30 (02):
  • [29] Tracking the catalyzed growth process of nanowires by in situ x-ray diffraction
    Kirkham, Melanie
    Wang, Zhong Lin
    Snyder, Robert L.
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (01)
  • [30] INVESTIGATION OF THE GROWTH STRIATIONS IN SILICON BY X-RAY TOPOGRAPHY
    KUBENA, J
    HOLY, V
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1983, 33 (12) : 1315 - &
12345