Structure design criteria of dual-channel high mobility electron transistors

被引：2
|
作者：
Lin, Jia-Chuan
Chen, Yu-Chieh
Tsai, Wei-Chih
Yang, Po-Yu
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Chiao Tung Univ, Dept Photon & Display Inst, Taipei, Taiwan
来源：
SOLID-STATE ELECTRONICS | 2007年 / 51卷 / 01期
关键词：
dual-channel; single-channel; delta-doping; HEMT; 2DEG;
D O I：
10.1016/j.sse.2006.11.016
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The design criteria of dual-channel high electron mobility transistor (DHEMT) are proposed in this study. 8-Doped In(0.52)Al(0.48)As/ In(0.53)Ga(0.47)As/InP material systems are concentrated in this article. The DHEMT structures are explored numerically and compared with conventional single-channel high electron mobility transistor (SHEMT) structures. Some criteria of doping concentration and layer structure design are proposed. The simulation results reveal that DHEMT has a larger voltage swing, a lower gate leakage current, a better carrier confinement, a higher density of two-dimensional electron gas (2DEG) and an excellent transconductance than SHENIT. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码：64 / 68
页数：5
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