High temperature, high current, 4H-SiC Accu-DMOSFET

被引：10

作者：

Singh, R ^{[1
]}

Ryu, SH ^{[1
]}

Palmour, JW ^{[1
]}

机构：

[1] Cree Res Inc, Durham, NC 27703 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

accumulation layer; high power; high temperature; MOSFET;

D O I：

10.4028/www.scientific.net/MSF.338-342.1271

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Planar 4H-SiC Accu-DMOSFETs have been designed, fabricated and characterized, and the highest reported current >1 Amp) for this type of device was achieved at both room temperature and 350 degreesC. The highest breakdown voltage obtained on a 1200 m Omega -cm(2) device was 904 V. The specific on-resistance obtained on another 439 V device was measured to be 90 m Omega -cm(2) and the accumulation layer mobility is estimated to be in the 5 to 8 cm(2)/V-sec range. The temperature variation of on-resistance, channel mobility and threshold voltage is also presented.

引用

页码：1271 / 1274

页数：4

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