Dielectric properties of sol-gel derived Ta2O5 thin films

被引：26
|
作者：
Yildirim, S
Ulutas, K [1 ]
Deger, D
Zayim, EO
Turhan, I
机构：
[1] Istanbul Univ, Dept Phys, Fac Sci, TR-34459 Istanbul, Turkey
[2] Istanbul Tech Univ, Dept Phys, Fac Sci & Letter, TR-34469 Maslak, Turkey
来源：
VACUUM | 2005年 / 77卷 / 03期
关键词：
Ta2O5; thin films; sol-gel; dielectric constant; dielectric loss and relaxation;
D O I：
10.1016/j.vacuum.2004.12.002
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The dielectric constant and the dielectric loss of tantalum pentoxide (Ta2O5) thin films, produced by sol-gel spin-coated process on Corning glass substrates, have been investigated in the frequency range of 20-10(5) Hz and the temperature range of 183-403 K, using ohmic Al electrodes. The frequency and temperature dependence of relaxation time has also been determined. The capacitance and loss factor were found to decrease with increasing frequency and increase with increasing temperature. The activation energy values were evaluated and a good agreement between the activation energy values obtained from capacitance and dielectric loss factor measurements were observed. (c) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：329 / 335
页数：7
相关论文
共 50 条
  • [31] Properties and reliability of Ta2O5 thin films deposited on Ta
    Ezhilvalavan, S.
    Tseng, Tseung-Yuen
    Proceedings - Electronic Components and Technology Conference, 1999, : 1042 - 1046
  • [32] Preparation of Characterization of Sol-Gel Derived BaTi5O11 Dielectric Thin Films
    Hsu, Cheng-Hsing
    Tseng, Ching-Fang
    Yu, Cheng-Chi
    Liu, Jen-Chieh
    Chen, Chia-Hao
    Chan, Che-Yu
    2017 24TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD), 2017, : 253 - 256
  • [33] Electrical properties of Ta2O5 thin films deposited on Ta
    Ezhilvalavan, S
    Tseng, TY
    APPLIED PHYSICS LETTERS, 1999, 74 (17) : 2477 - 2479
  • [34] ELECTRICAL-PROPERTIES OF THIN HIGH-DIELECTRIC TA2O5 FILMS
    RAUSCH, N
    BURTE, EP
    MICROELECTRONICS JOURNAL, 1994, 25 (07) : 533 - 537
  • [35] Third-order nonlinear optical properties of sol-gel-derived V2O5, Nb2O5, and Ta2O5 thin films
    1600, Optical Soc of America, Washington, DC, USA (34):
  • [36] Properties of Sol-Gel Derived Thin Organoalkylenesiloxane Films
    Nenashev, R. N.
    Vishnevskiy, A. S.
    Kotova, N. M.
    Vorotilov, K. A.
    INORGANIC MATERIALS, 2018, 54 (04) : 405 - 411
  • [37] Ta2O5 thin films with exceptionally high dielectric constant
    Lin, J
    Masaaki, N
    Tsukune, A
    Yamada, M
    APPLIED PHYSICS LETTERS, 1999, 74 (16) : 2370 - 2372
  • [38] Ta2O5 thin films with exceptionally high dielectric constant
    Adv. Process Integration Department, Technology Development Division, Semiconductor Group, C832, 4-1-1, Kamikodanaka, Nakahara-Ku, Kawasaki, 211-88, Japan
    Appl Phys Lett, 16 (2370-2372):
  • [39] Dielectric relaxation and defect analysis of Ta2O5 thin films
    Ezhilvalavan, S
    Tsai, MS
    Tseng, TY
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (10) : 1137 - 1142
  • [40] DETERMINATION OF DENSITY AND DIELECTRIC CONSTANT OF THIN TA2O5 FILMS
    KLERER, J
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (09) : 896 - &
12345