Evidence of sn adatoms quantum tunneling at the α-Sn/Si(111) surface

被引：19
|
作者：
Ronci, Fabio
Colonna, Stefano
Cricenti, Antonio
机构：
[1] CNR, ISM, I-00133 Rome, Italy
[2] CNRS, CRMCN, F-13288 Marseille, France
来源：
PHYSICAL REVIEW LETTERS | 2007年 / 99卷 / 16期
关键词：
D O I：
10.1103/PhysRevLett.99.166103
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We present a low-temperature scanning tunneling microscopy study of the alpha-Sn/Si(111) surface that demonstrates the fluctuating behavior of the Sn adatoms. The dynamical fluctuation model, successfully applied in describing the alpha-Sn/Ge(111) surface, is proposed for the related alpha-Sn/Si(111) surface too, although with a much lower transition temperature. In addition, a new phenomenon appears responsible for the unexpected evidence that the average oscillation frequency remains constant at temperatures lower than 15 K, in contradiction to the Arrhenius law. We explain this phenomenon as quantum tunneling of Sn adatoms.
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页数：4
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