Forming-free resistive switching in solution-processed silicon nanocrystal thin film

被引：6
|
作者：
Kawauchi, Takeshi [1 ]
Kano, Shinya [1 ]
Fujii, Minoru [1 ]
机构：
[1] Kobe Univ, Grad Sch Engn, Dept Elect & Elect Engn, Kobe, Hyogo 6578501, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2018年 / 124卷 / 08期
关键词：
MEMORIES; PHOSPHORUS; BORON; MECHANISMS; LIGANDS; OXIDE;
D O I：
10.1063/1.5032244
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a forming-free resistive switching using a solution-processed silicon nanocrystal (Si NC) thin film. A Si NC thin film is formed on an ITO/glass substrate by spin-coating a colloidal Si NC solution in air. The Si NC thin film shows bipolar resistive switching without a forming process. Electrical characteristics at low temperatures and in various gas environments suggest that a non-swichiometric SiOx shell on Si NCs contributes to the resistive switching. We propose that the origin of the resistive switching is a conductive filament of oxygen vacancies on the SiOx shell by an electric field. Published by AIP Publishing.
引用
收藏
页数：6
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