Radiation-Hardened Electronics and Ferroelectric Memory for Space Flight Systems

The National Aeronautics and Space Administration (NASA) is developing high-tolerance, radiation-hardened electronics for missions in and beyond Low Earth orbit. Ferroelectric-based electronics are highly viable candidates for these electronics because of their inherent radiation-hardened property. Since standard memory devices are prone to damage caused by radiation, ferroelectric memory may provide the needed radiation-tolerance. To test the effectiveness of ferroelectric random access memory (FRAM) in Low Earth orbit, a 512 K Ramtron FRAM will be flown on a Low Earth orbit satellite that will be launched by NASA. This paper discusses the advantages of ferroelectric electronics and outlines the Low Earth orbit ferroelectric memory test experiment.