Formation of Pt-induced Ge atomic nanowires on Pt/Ge(001): A density functional theory study

被引:132
|
作者
Vanpoucke, Danny E. P. [1 ]
Brocks, Geert
机构
[1] Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands
来源
PHYSICAL REVIEW B | 2008年 / 77卷 / 24期
关键词
D O I
10.1103/PhysRevB.77.241308
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Pt deposited onto a Ge(001) surface gives rise to the spontaneous formation of atomic nanowires on a mixed Pt-Ge surface after high-temperature annealing. We study possible structures of the mixed surface and the nanowires by total energy (density functional theory) calculations. Experimental scanning-tunneling microscopy images are compared to the calculated local densities of states. On the basis of this comparison and the stability of the structures, we conclude that the formation of nanowires is driven by an increased concentration of Pt atoms in the Ge surface layers. Surprisingly, the atomic nanowires consist of Ge instead of Pt atoms.
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页数:4
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