Fatigue properties of oriented PZT ferroelectric thin films

被引：24
|
作者：
Le Rhun, G
Poullain, G
Bouregba, R
Leclerc, G
机构：
[1] Univ Caen, Lab CRISMAT, ENSICAEN, F-14050 Caen, France
[2] CNRS, UMR 6508, F-14050 Caen, France
来源：
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2005年 / 25卷 / 12期
关键词：
films; ferroelectric properties; fatigue; PZT;
D O I：
10.1016/j.jeurceramsoc.2005.03.046
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Oriented PZT thin films with Zr/Ti ratio of 60/40 were prepared using a multi-target R.F. sputtering system. The films were (1 0 0) or (1 1 1) oriented when grown on Pt/TiO2/SiO2/Si and exhibited c-axis epitaxial microstructure when deposited on Pt/MgO. Electrical measurements were performed in order to investigate the fatigue properties of the films. Fatigue characteristics of the Pt/PZT/Pt capacitors were found to be strongly dependent on their crystalline orientation: (1 1 1) and (0 0 1) oriented films exhibited poor fatigue endurance unlike (1 0 0) oriented films that did not fatigue. Lastly, almost full recovery of polarisation was obtained for c-axis epitaxial films while (1 1 1) oriented films showed only partial restoration. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：2281 / 2284
页数：4
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