Stoichiometric effects on optical properties of cadmium sulphide quantum dots

被引：24

作者：

Chaure, S. ^{[1
]}

Chaure, N. B.

Pandey, R. K.

Ray, A. K.

机构：

[1] Univ London, Queen Mary, Dept Mat, Nanotechnol Res Labs, London E1 4NS, England

[2] Bhopal Univ, Dept Phys, Bhopal, India

[3] Sheffield Hallam Univ, Fac Arts Comp Engn & Sci, Sheffield S1 1WB, S Yorkshire, England

来源：

IET CIRCUITS DEVICES & SYSTEMS | 2007年 / 1卷 / 03期

关键词：

D O I：

10.1049/iet-cds:20070048

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Size quantised cadmium sulphide (CdS) nanocrystalline thin films with different particle sizes and stoichiometric ratios were successfully grown on indiurn tin oxide substrates using an aqueous synthetic route. The effect of cadmium (Cd) to sulphur (S) ratio on the optical properties of US nanocrystalline films was investigated using EDAX, UV-vis spectroscopy, photoluminescence and Raman spectroscopy. A satisfactory stoichiometric condition was achieved for 0.13 M concentration of thiourea whereas concentrations in the range of 1-1.2% of mercaptoethanol capping agents produced values much smaller than Wannier exciton diameter for CdS grain sizes, leading to quantum confinement. Photoluminescence emission bands and Raman peaks were analysed for the physical understanding of optimum growth of CdS quantum dots.

引用

页码：215 / 219

页数：5

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