A Micromachined Piezoresistive Pressure Sensor with a Shield Layer

被引：6

作者：

Cao, Gang ^{[1
]}

Wang, Xiaoping ^{[1
]}

Xu, Yong ^{[2
]}

Liu, Sheng ^{[3
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Mech Sci & Engn, Wuhan 430074, Peoples R China

[2] Wayne State Univ, Dept Elect & Comp Engn, Detroit, MI 48202 USA

[3] Wuhan Univ, Sch Power & Mech Engn, Wuhan 430072, Peoples R China

来源：

SENSORS | 2016年 / 16卷 / 08期

关键词：

silicon pressure sensor; shield layer; stability; SILICON; FABRICATION;

D O I：

10.3390/s16081286

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

This paper presents a piezoresistive pressure sensor with a shield layer for improved stability. Compared with the conventional piezoresistive pressure sensors, the new one reported in this paper has an n-type shield layer that covers p-type piezoresistors. This shield layer aims to minimize the impact of electrical field and reduce the temperature sensitivity of piezoresistors. The proposed sensors have been successfully fabricated by bulk-micromachining techniques. A sensitivity of 0.022 mV/V/kPa and a maximum non-linearity of 0.085% FS are obtained in a pressure range of 1 MPa. After numerical simulation, the role of the shield layer has been experimentally investigated. It is demonstrated that the shield layer is able to reduce the drift caused by electrical field and ambient temperature variation.

引用

页数：13

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