CHARACTERIZATION of ION IMPLANTATION QUANTUM WELL INTERMIXING for CARRIER CONFINEMENT of VCSEL

被引：0
|
作者：
Moriwaki, Shouhei [1 ]
Saitou, Minoru [1 ]
Kunisada, Shougo [1 ]
Miyamoto, Tomoyuki [1 ]
机构：
[1] Tokyo Inst Technol, Precis & Intelligence Lab, Photon Integrat Syst Res Ctr, Midori Ku, 4259-R2-39 Nagatsuta, Yokohama, Kanagawa 2268503, Japan
来源：
2015 20TH MICROOPTICS CONFERENCE (MOC) | 2015年
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D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The quantum well intermixing (QWI) using a proton implantation was investigated. The PL energy shift showed peak at certain proton dose density. High In composition in QW showed increased energy shift. The proton implantation QWI showed large recovery of PL intensity in comparison with the QWI using SiO2. The QWI will be applied to the carrier confinement of the VCSEL.
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页数：2
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