Low On-Resistance 1.2 kV 4H-SiC MOSFETs Integrated with Current Sensor

被引：0

作者：

Furukawa, A. ^{[1
]}

Kinouchi, S. ^{[1
]}

Nakatake, H. ^{[1
]}

Ebiike, Y. ^{[1
]}

Kagawa, Y. ^{[1
]}

Miura, N. ^{[1
]}

Nakao, Y. ^{[1
]}

Imaizumi, M. ^{[1
]}

Sumitani, H. ^{[1
]}

Oomori, T. ^{[2
]}

机构：

[1] Mitsubishi Electr Corp, Adv Technol R&D Ctr, 8-1-1 Tsukaguchi Honmachi, Amagasaki, Hyogo 6618661, Japan

[2] Mitsubishi Electr Corp, Power Device Works, Amagasaki, Hyogo, Japan

来源：

2011 IEEE 23RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2011年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

4H-SiC MOSFETs integrated with a current sensor have been fabricated for the first time. The MOSFET shows superior characteristics with a specific on-resistance of 3.7 m Omega cm(2) and a blocking voltage of 1.4 kV. The deviation of the current ratio (Imain/Isense) stays within 10% in the temperature range between 25 degrees C and 175 degrees C, which is desirable for the current sensor of high power devices. Furthermore, the main current shut-off operation at an over-current detected using the current sensor has been demonstrated successfully.

引用

页码：288 / 291

页数：4

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