Optical and photoelectric properties of gamma-irradiated GaS:Er3+ layered crystals

被引：2
|
作者：
Madatov, R. S. [1 ]
Tagiev, T. B. [1 ]
Abushev, S. A. [1 ]
Shekili, Sh. P. [1 ]
Mobili, A. R. [1 ]
机构：
[1] Azerbaijan Acad Sci, Inst Raditat Res, AZ-1143 Baku, Azerbaijan
来源：
INORGANIC MATERIALS | 2008年 / 44卷 / 04期
关键词：
D O I：
10.1134/S002016850804002X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Erbium doping (0.1, 0.15, 0.20 at % Er) markedly increases the photosensitivity and photoluminescence (PL) intensity of GaS crystals. Most likely, erbium substitutes on the gallium site. Irradiation with low gamma doses increases the photosensitivity and PL intensity of the crystals, broadens their PL spectrum, and shifts the PL peaks to longer wavelengths. It seems likely that the radiation-induced recombination centers consist of gallium vacancies and erbium atoms. The concentration of such defect complexes depends on the gamma dose.
引用
收藏
页码：333 / 336
页数：4
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