Macro and microsurface morphology reconstructions during laser-induced etching of silicon

被引:25
|
作者
Kumar, Rajesh [1 ]
Mavi, H. S. [1 ]
Shukla, A. K. [1 ]
机构
[1] Indian Inst Technol, Dept Phys, New Delhi 110016, India
关键词
laser-induced etching; surface morphology; SENT; AFM;
D O I
10.1016/j.micron.2007.04.005
中图分类号
TH742 [显微镜];
学科分类号
摘要
Surface morphologies of the laser-etched silicon were studied as a function of the laser power densities. Scanning electron microscope (SEM) results show that different kind of microstructures develop. Pores like structures are formed at low laser power density and pillar like structures are obtained at higher laser power density. It is the etching rate, which is responsible for the surface morphology reconstructions. Etching rate was found to be a function of the laser power density. Atomic force microscope (AFM) results reveal that macro and microsurface morphology reconstructions take place simultaneously as a result of increasing etching rate. Macrosurface morphology reconstruction takes place on the silicon wafer surface and the microsurface morphology reconstruction takes place inside the pore wall. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码:287 / 293
页数:7
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