Modeling of the electrical derivative characteristic of InGaAsP multiple-quantum-well lasers

A comprehensive semiconductor laser model is used to analyze the first electrical derivative characteristic of long wavelength MQW semiconductor lasers. It is found that the charge neutrality condition and the continuity of the quasi-Fermi levels, usually assumed in the rate equation approach, need not be respected. The first electrical derivative characteristics of abrupt and GRINSCH MQW structures are presented. The effects of doping in the active region on the optical gain and on the first electrical derivative characteristic are also studied.