Physical origins of nonlinearity in InP double heterojunction bipolar transistors

被引：1
|
作者：
Xu, H. [1 ]
Iverson, E. W. [1 ]
Cheng, K. Y. [1 ]
Feng, M. [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 11期
关键词：
D O I：
10.1063/1.3694285
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Two tone inter-modulation distortion measurements were performed at 18 GHz to characterize the nonlinearity of Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs). Two-dimensional hydrodynamic (HD) simulations were also performed, showing that the base push-out and charge accumulation effects are the dominant physical origins of nonlinearity for the Type-I DHBT at high current densities. Comparatively, the Type-I/II DHBT exhibits no such effects. Hence, we conclude that DHBTs having a Type-I/II energy band alignment will have an inherent linearity advantage compared to DHBTs with the Type-I energy band alignment. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3694285]
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页数：3
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