Physical Insights Into the Mobility Enhancement in Amorphous InGaZnO Thin-Film Transistor by SiO2 Passivation Layer

被引：5

作者：

Zhang, Panpan ^{[1
]}

Samanta, Subhranu ^{[1
]}

Fong, Xuanyao ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117583, Singapore

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2020年 / 67卷 / 06期

关键词：

Amorphous InGaZnO (a-IGZO) thin-film transistor (TFT); interface engineering; passivation layer (PVL); technology computer-aided design (TCAD); A-IGZO TFTS;

D O I：

10.1109/TED.2020.2989105

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, the mobility enhancement mechanism due to the SiO2 passivation layer (PVL) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is studied using technology-computer-aideddesign (TCAD) simulation. Our results indicate that the introduction of oxygen vacancies in shallow donor states around the PVL/a-IGZO interface, which donate more free electrons in the induced accumulation layer of the channel, increases the field-effect mobility of the TFT by 5.7x. Results of our TCAD simulations are strongly supported by X-ray photoelectron spectroscopy (XPS) measurements. Furthermore, TCAD analysis of a three-stage ring oscillator composed of the sample with PVL indicates 27-MHz oscillation frequency is possible at 10-V supply voltage.

引用

页码：2352 / 2358

页数：7

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