Low-Frequency Noise Characteristics in Multilayer MoTe2 FETs With Hydrophobic Amorphous Fluoropolymers

This letter investigates the low-frequency noise (LFN) properties of the multilayer MoTe2 field-effect transistors (FETs) before and after hydrophobic amorphous polymer (CYTOP) encapsulation in the subthreshold and linear regimes. The noise spectrum density of drain current (S-ID) shows that the LFN in the multilayer MoTe2 FETs nicely fits to a 1/f(gamma) power law with gamma similar to 1 in the frequency range of 10-200 Hz. From the dependence of S-ID on the drain current, carrier number fluctuation (Delta n) is considered as a dominant LFN mechanism from all operation regimes in the multilayer MoTe2 FETs. Extracted trap density (N-t) based on the McWhorter model in this letter was reduced at least more than one order level compared with the multilayer MoTe2 FETs without CYTOP passivation.