Liquid cobalt(I) hydride complexes as precursors for chemical vapor deposition

被引：22

作者：

Choi, H ^{[1
]}

Park, S

机构：

[1] Univ Illinois, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

CHEMISTRY OF MATERIALS | 2003年 / 15卷 / 16期

关键词：

D O I：

10.1021/cm030100e

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Volatile cobalt (I) hydride complexes HCo[(ROP)-O-1(OR2)(2)](4) were synthesized, where R-1 = Me, Et, i-Pr, n-Pr, n-Bu, i-Bu, Ph, and benzyl, and R-2 = Me and Et. The cobalt complexes were obtained as liquids as RI was lengthened from ethyl to longer chains. The thermal stability of the complex was lowered with bulky R-1, thus, HCo[n-PrOP(OMe)(2)](4) and HCo[n-BuOP-(OMe)(2)](4) were distillable but HCo[i-BuOP(OMe)(2)](4) was not. Pure cobalt films of smooth and dense surface morphology were deposited on Si at temperatures as low as 270 degreesC using the cobalt hydrides as precursors under reduced pressure without employing H-2.

引用

页码：3121 / 3124

页数：4

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