Program for Modeling Transient Off of Power Semiconductor Devices

被引：3

作者：

Bespalov, N. N. ^{[1
]}

Ilyin, M. V. ^{[1
]}

Kapitonov, S. S. ^{[1
]}

Lysenkov, A. E. ^{[1
]}

机构：

[1] Natl Res Ogarev Mordovia State Univ, Dept Elect & Nanoelect, Saransk, Russia

来源：

2015 INTERNATIONAL SIBERIAN CONFERENCE ON CONTROL AND COMMUNICATIONS (SIBCON) | 2015年

关键词：

LabVIEW; power semiconductor device; transition off; the semiconductor structure;

D O I：

10.1109/SIBCON.2015.7146998

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

The article deals with a program for modeling the transient off of power semiconductor devices, which allows to take into account the parameters of a semiconductor structure of power semiconductor devices and circuitry.

引用

页数：3

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