Spin effects in InAs self-assembled quantum dots

被引：2

作者：

dos Santos, Ednilson C. ^{[1
]}

Gobato, Yara Galvao ^{[1
]}

Brasil, Maria J. S. P. ^{[2
]}

Taylor, David A. ^{[3
]}

Henini, Mohamed ^{[3
]}

机构：

[1] Univ Fed Sao Carlos, Dept Phys, BR-13560 Sao Carlos, SP, Brazil

[2] Univ Estadual Campinas, Inst Phys, Campinas, SP, Brazil

[3] Univ Nottingham, Sch Phys & Astron, Nottingham Nanotechnol & Nanosci Ctr, Nottingham NG7 2RD, England

来源：

NANOSCALE RESEARCH LETTERS | 2011年 / 6卷

关键词：

COMPUTATION; INJECTION;

D O I：

10.1186/1556-276X-6-115

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD) of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs) in the center of a GaAs quantum well (QW). We have observed that the QD circular polarization degree depends on applied voltage and light intensity. Our results are explained in terms of the tunneling of minority carriers into the QW, carrier capture by InAs QDs and bias-controlled density of holes in the QW.

引用

页数：5

共 50 条

[31] Electronic structure of InAs self-assembled quantum dots
Schmidt, KH
Bock, C
Kunze, U
Khorenko, VV
Malzer, S
Döhler, GH
Versen, M
Reuter, D
Wieck, AD
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 88 (2-3): : 238 - 242
[32] Carrier dynamics in self-assembled InAs quantum dots
Zhang, XH
Dong, JR
Chua, SJ
DESIGN, FABRICATION, AND CHARACTERIZATION OF PHOTONIC DEVICES II, 2001, 4594 : 192 - 196
[33] Strain status of self-assembled InAs quantum dots
Zhang, K
Heyn, C
Hansen, W
Schmidt, T
Falta, J
APPLIED PHYSICS LETTERS, 2000, 77 (09) : 1295 - 1297
[34] Luminescence spectroscopy of InAs self-assembled quantum dots
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, United States
不详
不详
Superlattices Microstruct, 2 (XXIV-265):
[35] Multiexciton complexes in InAs self-assembled quantum dots
Korkusinski, M.
Zielinski, M.
Hawrylaka, P.
JOURNAL OF APPLIED PHYSICS, 2009, 105 (12)
[36] Self-alignment of self-assembled InAs quantum dots
Hong, SU
Kim, JS
Lee, JH
Kwack, HS
Han, WS
Oh, DK
JOURNAL OF CRYSTAL GROWTH, 2006, 286 (01) : 18 - 22
[37] Charging effect in InAs self-assembled quantum dots
Wang, TH
Li, HW
Zhou, JM
APPLIED PHYSICS LETTERS, 2001, 79 (10) : 1537 - 1539
[38] Optical charging of self-assembled InAs quantum dots
Heinrich, D
Finley, J
Skalitz, M
Hoffmann, J
Zrenner, A
Böhm, G
Abstreiter, G
OPTICAL PROPERTIES OF SEMICONDUCTOR NANOSTRUCTURES, 2000, 81 : 365 - 377
[39] Spin polarization in self-assembled quantum dots
Sheng, WD
Hawrylak, P
PHYSICAL REVIEW B, 2006, 73 (12)
[40] Electric field effect in the spin dynamics of self-assembled InAs/GaAs quantum dots
Monte, A. F. G.
Morais, P. C.
Hopkinson, M.
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2007, 316 (02) : E52 - E55

← 1 2 3 4 5 →