Protrusions of Super Grains Formed by Ultrashort Xe Flash-Lamp Annealing of Amorphous Silicon and Its Effect on the Performances of Thin-Film Transistors

被引：8

作者：

Saxena, Saurabh ^{[1
]}

Jang, Jin ^{[1
]}

机构：

[1] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 08期

关键词：

Flash-lamp annealing (FLA); low-temperature polycrystalline silicon (poly-Si); subgrain boundaries; super grain; thin-film transistors (TFTs); LASER LATERAL CRYSTALLIZATION; SI FILMS; POLYCRYSTALLINE; TFTS;

D O I：

10.1109/TED.2011.2157827

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We studied the formation of super grains and protrusions at the grain boundaries by the ultrashort Xe flash-lamp annealing of amorphous silicon. Huge protrusions at the grain boundary originate from the collision of nearby super grains with an average grain diameter of 40 mu m, and small protrusions at the grain boundary are also observed. The crystallization starts from the seeds located at the center of the grains by releasing heat toward the surrounding Si. The formation of grain boundaries is related to lateral grain growth and pushing liquid silicon toward the direction of grain growth and the collisions between them. Thin-film transistors (TFTs) with various grain boundaries in the channel were investigated, and the p-channel poly-Si TFTs with two and four grain boundaries exhibited the maximum field-effect mobility of 112 and 75 cm(2)/V . s, respectively.

引用

页码：2638 / 2643

页数：6

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