Excellent 22FDX Hot-Carrier Reliability for PA Applications

被引：3

作者：

Chen, T. ^{[1
]}

Zhang, C. ^{[1
]}

Arfaoui, W. ^{[3
]}

Bellaouar, A. ^{[1
]}

Embabi, S. ^{[1
]}

Bossu, G. ^{[3
]}

Siddabathula, M. ^{[3
]}

Chew, K. W. J. ^{[2
]}

Ong, S. N. ^{[2
]}

Mantravadi, M. ^{[1
]}

Barnett, K. ^{[1
]}

Bordelon, J. ^{[1
]}

Taylor, R. ^{[1
]}

Janardhanan, S. ^{[1
]}

机构：

[1] GLOBALFOUNDRIES, Malta, NY 12020 USA

[2] GLOBALFOUNDRIES, Singapore, Singapore

[3] GLOBALFOUNDRIES, Dresden, Germany

来源：

2019 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC) | 2019年

关键词：

mmWave power amplifier; low noise amplifier; switch; SOI; FDSOI; aging; HCI; reliability; load pull; 22nm; RelXpert; 22FDX (R);

D O I：

10.1109/rfic.2019.8701760

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work shows the excellent HCI (hot-carrier injection) reliability that 22FDX demonstrates for mmWave PA applications. The underlying device physics to explain this performance are also shown. Due to the fact that fully depleted SOI (FDSOI) eliminates the lateral bipolar device, the MOSFETs in 22FDX (R) technology have an increased BVDSs when compared to a device in a partially depleted SOI (PDSOI) technology. A 2-stack PA is presented that demonstrates excellent reliability against all HCI stress. The device aging model is built based on the device stress data specific for PA applications. RelXpert is used to simulate device aging based on the model and suggests excellent PA reliability even under the worst mismatch condition.

引用

页码：27 / 30

页数：4

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