Microstructure and deposition rate of aluminum thin films from chemical vapor deposition with dimethylethylamine alane

被引:23
|
作者
Kim, BY [1 ]
Li, XD [1 ]
Rhee, SW [1 ]
机构
[1] POHANG UNIV SCI & TECHNOL,DEPT CHEM ENGN,LAB ADV MAT PROC,POHANG 790784,SOUTH KOREA
关键词
D O I
10.1063/1.116639
中图分类号
O59 [应用物理学];
学科分类号
摘要
Deposition of aluminum film from DMEAA in the temperature range of 100-300 degrees C has been studied. In this temperature range, there is a maximum deposition rate at around 150 degrees C. The film deposited at 190 degrees C has elongated blocklike grain shapes, which are similar to 600 nm in width and 930 nm in length. Grains in the film deposited at 150 degrees C showed an equiaxed structure with grain size in the range of 100-300 nm in a film with 600 nm thickness, Aluminum oxide particle inclusion was observed especially at high deposition temperature. Plausible reaction pathways of DMEAA dissociation were suggested to explain the experimental observations. (C) 1996 American Institute of Physics.
引用
收藏
页码:3567 / 3569
页数:3
相关论文
共 50 条
  • [31] Chemical vapor deposition of aluminum and gallium nitride thin films from metalorganic precursors
    Hoffman, DM
    Rangarajan, SP
    Athavale, SD
    Economou, DJ
    Liu, JR
    Zheng, ZS
    Chu, WK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (02): : 306 - 311
  • [32] Morphology and growth mode of Al films deposited by chemical vapor deposition from dimethylethylamine alane on GaAs(001)2x4 surfaces
    Venkateswaran, N
    Karpov, I
    Gladfelter, W
    Franciosi, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (03): : 1949 - 1956
  • [33] CHEMICAL-VAPOR-DEPOSITION OF AL FROM DIMETHYLETHYLAMINE ALANE ON GAAS(100)C(4X4) SURFACES
    KARPOV, I
    BRATINA, G
    SORBA, L
    FRANCIOSI, A
    SIMMONDS, MG
    GLADFELTER, WL
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (06) : 3471 - 3478
  • [34] Morphology and hole filling properties of chemically vapor deposited aluminum films prepared from dimethylethylamine alane
    Kim, DH
    Kim, BY
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (01) : C10 - C15
  • [35] Chemical vapor deposition of silicon thin films
    Schropp, REI
    CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE, 2002, 6 (05): : 423 - 424
  • [36] Laser chemical vapor deposition of thin films
    Kar, A
    Mazumder, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 41 (03): : 368 - 373
  • [37] Chemical vapor deposition of electroceramic thin films
    deKeijser, M
    Dormans, GJM
    MRS BULLETIN, 1996, 21 (06) : 37 - 43
  • [38] CHEMICAL VAPOR-DEPOSITION PRECURSOR CHEMISTRY .1. THE DEPOSITION OF PURE ALUMINUM THIN-FILMS FROM AN ALUMINABORANE PRECURSOR COMPOUND BY CHEMICAL VAPOR-DEPOSITION
    GLASS, JA
    KHER, S
    SPENCER, JT
    THIN SOLID FILMS, 1992, 207 (1-2) : 15 - 18
  • [39] Deposition sequences for atomic layer growth of AIN thin films on Si(100) using dimethylethylamine alane and ammonia
    Kuo, JS
    Rogers, JW
    NITRIDE SEMICONDUCTORS, 1998, 482 : 33 - 38
  • [40] Chemical vapor deposition of organosilicon thin films from methylmethoxysilanes
    Casserly, TB
    Gleason, KK
    PLASMA PROCESSES AND POLYMERS, 2005, 2 (09) : 679 - 687