Low-Frequency Noise in Vertically Stacked Si n-Channel Nanosheet FETs

被引：22

作者：

de Oliveira, Alberto V. ^{[1
]}

Veloso, Anabela ^{[2
]}

Claeys, Cor ^{[3
]}

Horiguchi, Naoto ^{[2
]}

Simoen, Eddy ^{[2
]}

机构：

[1] Univ Tecnol Fed Parana UTFPR, Dept Elect Engn, BR-85902490 Toledo, Brazil

[2] IMEC, B-3001 Heverlee, Belgium

[3] Katholieke Univ Leuven KU Leuven, Dept Elect Engn, B-3001 Heverlee, Belgium

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 03期

关键词：

Carrier number fluctuations; flicker noise; gate-all-around; silicon device; input-referred voltage power spectral density; low-frequency-noise; n-channel; oxide trap density; power spectral density; NANOWIRE TRANSISTORS; 1/F NOISE; ORIENTATION; DENSITY; IMPACT; METAL;

D O I：

10.1109/LED.2020.2968093

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This manuscript presents a systematic low-frequency noise analysis of inversion-mode vertically stacked silicon n-channel nanosheet MOSFETs on bulk wafers. Flicker noise due to carrier number fluctuations is shown as the dominant noise source, which is in line with previous reported studies on gate-all-around (GAA) nanowire nMOSFETs. In addition, the benchmark points out that the vertical stacking approach does not deteriorate the oxide trap density, since its normalized input-referred voltage noise Power Spectral Density at flat-band is lower compared to the data on non-stacked horizontal nanowire nMOSFETs. Another finding is that the Coulomb scattering mechanism dominates the mobility.

引用

页码：317 / 320

页数：4

共 50 条

[21] MEASUREMENTS AND INTERPRETATION OF LOW-FREQUENCY NOISE IN FETS
DAS, MB
MOORE, JM
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (04) : 247 - 257
[22] Low-frequency noise in irradiated graphene FETs
Wu, Ting
Alharbi, Abdullah
Taniguchi, Takashi
Watanabe, Kenji
Shahrjerdi, Davood
APPLIED PHYSICS LETTERS, 2018, 113 (19)
[23] Impact of the TiN Layer Thickness on the Low-Frequency Noise and Static Device Performance of n-Channel MuGFETs
Rodrigues, M.
Mercha, A.
Collaert, N.
Simoen, E.
Claeys, C.
Martino, J. A.
NOISE AND FLUCTUATIONS, 2009, 1129 : 167 - +
[24] In depth static and low-frequency noise characterization of n-channel FinFETs on SOI substrates at cryogenic temperature
Achour, H.
Cretu, B.
Routoure, J. -M.
Carin, R.
Talmat, R.
Benfdila, A.
Simoen, E.
Claeys, C.
SOLID-STATE ELECTRONICS, 2014, 98 : 12 - 19
[25] Low-frequency noise analysis of Si/SiGe channel pMOSFETs
Li, PW
Liao, WM
SOLID-STATE ELECTRONICS, 2002, 46 (12) : 2281 - 2285
[26] LOW-FREQUENCY NOISE MEASUREMENTS OF GAAS-FETS
RIDDLE, AN
TREW, RJ
MICROWAVE JOURNAL, 1986, 29 (05) : 64 - 64
[27] LOW-FREQUENCY EXCESS NOISE IN SOS MOS FETS
HSU, ST
RCA REVIEW, 1980, 41 (04): : 577 - 591
[28] MEASUREMENTS AND INTERPRETATION OF LOW-FREQUENCY NOISE IN FETS - COMMENT
BERZ, F
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) : 293 - 294
[29] Low-Frequency Noise in Vertical InAs Nanowire FETs
Persson, Karl-Magnus
Lind, Erik
Dey, Anil W.
Thelander, Claes
Sjoland, Henrik
Wernersson, Lars-Erik
IEEE ELECTRON DEVICE LETTERS, 2010, 31 (05) : 428 - 430
[30] LOW-FREQUENCY NOISE SPECTRUM OF GAAS-FETS
GRAFFEUIL, J
ELECTRONICS LETTERS, 1981, 17 (11) : 387 - 388

← 1 2 3 4 5 →