Synthesis and characterization of silicon carbide (SiC) microstructures

被引：0
|
作者：
Legba, E. Thymour [1 ]
Olida, Nikki [2 ]
Hunley, D. Patrick [3 ]
Omer, Ingrid St. [1 ]
机构：
[1] Univ Kentucky, Dept Elect & Comp Engn, Lexington, KY 40506 USA
[2] Penn State Univ, Dept Elect Engn, State Coll, PA USA
[3] Morehead State Univ, Dept Phys Sci, Morehead, KY USA
来源：
PROCEEDINGS IEEE SOUTHEASTCON 2007, VOLS 1 AND 2 | 2007年
基金：
美国国家科学基金会;
关键词：
D O I：
10.1109/SECON.2007.343008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The purpose of this research was to synthesize and physically characterize silicon carbide microtubes. This was done by reacting silicon monoxide (SiO) powder with multi-walled carbon nanotubes (MWCNTs) at high temperature. Several experiments were conducted under vacuum in a high-temperature furnace varying temperature (1300 degrees C-1450 degrees C), time and reactant material mass. The resulting samples were then physically characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD analysis revealed the presence of dominant beta-silicon carbide phases. SEM images revealed a unique morphology in comparison with the starting materials.
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页码：783 / +
页数：2
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