The simulation of switching in polycrystalline ferroelectric ceramics

被引:169
|
作者
Hwang, SC
Huber, JE
McMeeking, RM [1 ]
Fleck, NA
机构
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[3] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
关键词
D O I
10.1063/1.368219
中图分类号
O59 [应用物理学];
学科分类号
摘要
A polarization switching model for polycrystalline ferroelectric ceramics has been developed, It is assumed that a single ferroelectric crystallite in a ceramic, which is subjected to an electric field and/or a stress, undergoes a complete polarization change and a corresponding strain change if the resulting reduction in potential energy exceeds a critical value per unit volume of switching material. The crystallite's switch causes a change in the interaction of its field and stress with the surrounding crystallites, which is modeled by the Eshelby inclusion method to provide a mean field estimate of the effect. Thus the model accounts for the effects of the mean electric and stress fields arising from the constraints presented by surrounding crystallites as well as the externally applied mechanical and electrical loads. The switching response of the ceramic polycrystal is obtained by averaging over the behavior of a large number of randomly oriented crystallites, The model, along with the linear dielectric, elastic, and piezoelectric behavior of the material, is implemented in a computer simulation. A fit to experimental electric displacement versus electric field, strain versus electric field, and strain versus stress curves of a ceramic lead lanthanum zirconate titanate PLZT at room temperature is used to obtain material parameters. The model then successfully predicts the electric displacement and strain hysteresis loops for the PLZT under varying electric fields with a constant applied stress. (C) 1998 American Institute of Physics. [S0021-8979(98)06015-0].
引用
收藏
页码:1530 / 1540
页数:11
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