High Thermoelectric Performance of SnTe via In Doping and Cu1.75Se Nanostructuring Approach

被引：19
|
作者：
Li, D. [1 ]
Ming, H. W. [1 ]
Li, J. M. [1 ]
Zhang, J. [1 ]
Qin, X. Y. [1 ]
Xu, W. [1 ]
机构：
[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
来源：
ACS APPLIED ENERGY MATERIALS | 2019年 / 2卷 / 12期
关键词：
SnTe-based materials; thermoelectric properties; thermal conductivity; nanoinclusion; ULTRALOW THERMAL-CONDUCTIVITY; LEAD;
D O I：
10.1021/acsaem.9b02061
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Improved thermoelectric properties for SnTe-based composites are realized in this work. The maximum ZT of 1.7 is obitined at 823.K for Sn0.96In0.04Te-yCu(1.75)Se (y = 3%, 5%, and 7%), which is realized by synergistic optimizing of the electrical and thermal transport.
引用
收藏
页码：8966 / +
页数：15
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