Stress-induced transition from modulated 14M to non-modulated martensite in Ni-Mn-Ga alloy

被引:37
|
作者
Ge, Y. [1 ]
Zarubova, N. [2 ]
Heczko, O. [2 ]
Hannula, S-P. [1 ]
机构
[1] Aalto Univ, Sch Chem Technol, Dept Mat Sci & Engn, FI-00076 Aalto, Finland
[2] Acad Sci Czech Republ, Inst Phys, Vvi, CZ-18221 Prague 8, Czech Republic
基金
芬兰科学院;
关键词
Ni-Mn-Ga; In situ TEM; Magnetic shape memory; Twinning dislocation; Intermartensitic transition; TRANSMISSION ELECTRON-MICROSCOPY; IN-SITU; CRYSTAL-STRUCTURE; ADAPTIVE MARTENSITE; TRANSFORMATIONS; TEM;
D O I
10.1016/j.actamat.2015.02.028
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Observation of in situ straining of seven-layered (14M) martensite of Ni-Mn-Ga alloy was carried out by a transmission electron microscope (TEM). During straining, the intermartensitic transition from 14M to non-modulated martensite (NM) occurred via motion of partial dislocation with a Burgers vector b = 1/6[1 (1) over bar 0] along the basal plane of 14M. High resolution TEM studies revealed that the moving partial at the end of the fault is actually a pair of partial dislocations leading to a two-layered fault on the basal plane. This fault is twin related to the adjoining five-layered basal plane forming complete seven-layered nanotwinned structure. The results demonstrate that the 14M to NM transition is a detwinning process of these nanotwins, and seems to confirm the nanotwin nature of the long-period stacking-order structure of 14M martensite. The lattice parameters of the average structure are strongly affected by the regularity of the stacking sequence, i.e., by the volume fraction of the two-layer nanotwins and their distribution. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:151 / 160
页数:10
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