Ni-Mn-Ga;
In situ TEM;
Magnetic shape memory;
Twinning dislocation;
Intermartensitic transition;
TRANSMISSION ELECTRON-MICROSCOPY;
IN-SITU;
CRYSTAL-STRUCTURE;
ADAPTIVE MARTENSITE;
TRANSFORMATIONS;
TEM;
D O I:
10.1016/j.actamat.2015.02.028
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Observation of in situ straining of seven-layered (14M) martensite of Ni-Mn-Ga alloy was carried out by a transmission electron microscope (TEM). During straining, the intermartensitic transition from 14M to non-modulated martensite (NM) occurred via motion of partial dislocation with a Burgers vector b = 1/6[1 (1) over bar 0] along the basal plane of 14M. High resolution TEM studies revealed that the moving partial at the end of the fault is actually a pair of partial dislocations leading to a two-layered fault on the basal plane. This fault is twin related to the adjoining five-layered basal plane forming complete seven-layered nanotwinned structure. The results demonstrate that the 14M to NM transition is a detwinning process of these nanotwins, and seems to confirm the nanotwin nature of the long-period stacking-order structure of 14M martensite. The lattice parameters of the average structure are strongly affected by the regularity of the stacking sequence, i.e., by the volume fraction of the two-layer nanotwins and their distribution. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
机构:
Univ Calif Los Angeles, Dept Mech & Aerosp Engn, Act Mat Lab, Los Angeles, CA 90024 USAHelsinki Univ Technol, Dept Mat Sci & Engn, FI-02015 Helsinki, Finland
Mohanchandra, K. P.
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Heczko, O.
Lahelin, M.
论文数: 0引用数: 0
h-index: 0
机构:
Helsinki Univ Technol, Dept Biotechnol & Chem Technol, FI-02015 Helsinki, FinlandHelsinki Univ Technol, Dept Mat Sci & Engn, FI-02015 Helsinki, Finland
Lahelin, M.
Ge, Y.
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Helsinki Univ Technol, Dept Mat Sci & Engn, FI-02015 Helsinki, FinlandHelsinki Univ Technol, Dept Mat Sci & Engn, FI-02015 Helsinki, Finland
Ge, Y.
Carman, G. P.
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h-index: 0
机构:
Univ Calif Los Angeles, Dept Mech & Aerosp Engn, Act Mat Lab, Los Angeles, CA 90024 USAHelsinki Univ Technol, Dept Mat Sci & Engn, FI-02015 Helsinki, Finland
Carman, G. P.
Soderberg, O.
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Helsinki Univ Technol, Dept Mat Sci & Engn, FI-02015 Helsinki, FinlandHelsinki Univ Technol, Dept Mat Sci & Engn, FI-02015 Helsinki, Finland
Soderberg, O.
Lofgren, B.
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Helsinki Univ Technol, Dept Biotechnol & Chem Technol, FI-02015 Helsinki, FinlandHelsinki Univ Technol, Dept Mat Sci & Engn, FI-02015 Helsinki, Finland
Lofgren, B.
Seppala, J.
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Helsinki Univ Technol, Dept Biotechnol & Chem Technol, FI-02015 Helsinki, FinlandHelsinki Univ Technol, Dept Mat Sci & Engn, FI-02015 Helsinki, Finland
Seppala, J.
Hannula, S. -P.
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Helsinki Univ Technol, Dept Mat Sci & Engn, FI-02015 Helsinki, FinlandHelsinki Univ Technol, Dept Mat Sci & Engn, FI-02015 Helsinki, Finland
机构:
Univ Cent Florida, Adv Mat Proc & Anal Ctr, Orlando, FL 32816 USA
Univ Cent Florida, Dept Mat Sci & Engn, Orlando, FL 32816 USAUniv Cent Florida, Adv Mat Proc & Anal Ctr, Orlando, FL 32816 USA
Zhou, Le
Schneider, Matthew M.
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Univ Cent Florida, Dept Mat Sci & Engn, Orlando, FL 32816 USA
Univ Cent Florida, Mat Characterizat Facil, Orlando, FL 32816 USAUniv Cent Florida, Adv Mat Proc & Anal Ctr, Orlando, FL 32816 USA
Schneider, Matthew M.
Giri, Anit
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机构:
US Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUniv Cent Florida, Adv Mat Proc & Anal Ctr, Orlando, FL 32816 USA
Giri, Anit
Cho, Kyu
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US Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUniv Cent Florida, Adv Mat Proc & Anal Ctr, Orlando, FL 32816 USA