Sputtering and reactive ion etching damage to the Pt/Pb(Zr,Ti)O3/Pt thin film capacitors

被引：5

作者：

Lee, EG ^{[1
]}

Lee, JG

Kim, SJ

机构：

[1] Chosun Univ, Dept Mat Engn, Kwangju 501759, South Korea

[2] Kookmin Univ, Dept Met Engn, Seoul 136702, South Korea

[3] Korea Atom Energy Res Inst, Adv Nucl Mat Dev Team, Taejon 305600, South Korea

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 2001年 / 20卷 / 08期

关键词：

D O I：

10.1023/A:1010904301577

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

As-patterned capacitors were positively poled by the dc plasma potential during RIE of Pt. The hysteresis loops of the capacitors were found to be shifted, slanted, and constricted by space charges trapped at domain boundaries. The PZT film having sputtering damage was very sensitive to RIE damage. Annealing the top electrode removed the effect of the space charges, resulting in a good symmetrical hysteresis loop. Annealing the top electrode below Curie temperature accelerated aging process. As Zr/Ti ratio decreased, field shift increased and annealing temperature at which field disappears also increased.

引用

页码：769 / 772

页数：4

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