Synthesis of aluminium borate nanowires by sol-gel method
被引:39
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作者:
Wang, J
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机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Wang, J
Sha, J
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机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Sha, J
Yang, Q
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机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Yang, Q
Wang, YW
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机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Wang, YW
Yang, DR
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机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Yang, DR
[1
]
机构:
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[2] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China
[3] Zhejiang Univ, Ctr Anal & Measurement, Hangzhou 310027, Peoples R China
oxides;
sol-gel chemistry;
electron microscopy;
X-ray diffraction;
D O I:
10.1016/j.materresbull.2005.04.016
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
A sol-gel process followed by annealing was employed to fabricate single crystal aluminium borate (Al4B2O9 and Al18B4O33) nanowires. The diameter of Al4B2O9 nanowires synthesized at 750 degrees C annealing is ranging from 7 to 17 nm, and that of Al18B4O33 nanowires synthesized at 1050 degrees C annealing is about 38 nm. Instead of the well-known vapor-liquid-solid (VLS) mechanism, self-catalytic mechanism was used to explain the growth of the nanowires. (C) 2005 Elsevier Ltd. All rights reserved.
机构:Hong Kong Polytech Univ, Dept Mech Engn, Hong Kong, Hong Kong, Peoples R China
Yang, Z.
Huang, Y.
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机构:Hong Kong Polytech Univ, Dept Mech Engn, Hong Kong, Hong Kong, Peoples R China
Huang, Y.
Dong, B.
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机构:Hong Kong Polytech Univ, Dept Mech Engn, Hong Kong, Hong Kong, Peoples R China
Dong, B.
Li, H. -L.
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机构:Hong Kong Polytech Univ, Dept Mech Engn, Hong Kong, Hong Kong, Peoples R China
Li, H. -L.
Shi, S. -Q.
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机构:
Hong Kong Polytech Univ, Dept Mech Engn, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Mech Engn, Hong Kong, Hong Kong, Peoples R China
机构:
CSIR, Reg Res Lab, Mat & Minerals Div, Thiruvananthapuram 695019, Kerala, IndiaCSIR, Reg Res Lab, Mat & Minerals Div, Thiruvananthapuram 695019, Kerala, India
Jayasankar, M.
Ananthakumar, S.
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CSIR, Reg Res Lab, Mat & Minerals Div, Thiruvananthapuram 695019, Kerala, IndiaCSIR, Reg Res Lab, Mat & Minerals Div, Thiruvananthapuram 695019, Kerala, India
Ananthakumar, S.
Mukundan, P.
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CSIR, Reg Res Lab, Mat & Minerals Div, Thiruvananthapuram 695019, Kerala, IndiaCSIR, Reg Res Lab, Mat & Minerals Div, Thiruvananthapuram 695019, Kerala, India
Mukundan, P.
Warrier, K. G. K.
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CSIR, Reg Res Lab, Mat & Minerals Div, Thiruvananthapuram 695019, Kerala, IndiaCSIR, Reg Res Lab, Mat & Minerals Div, Thiruvananthapuram 695019, Kerala, India
机构:
Univ Tsukuba, Fac Pure & Appl Sci, Dept Mat Sci, Tsukuba, Ibaraki 3058573, JapanUniv Tsukuba, Fac Pure & Appl Sci, Dept Mat Sci, Tsukuba, Ibaraki 3058573, Japan
Miyashita, Ryo
Komaba, Kyoka
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Univ Tsukuba, Fac Pure & Appl Sci, Dept Mat Sci, Tsukuba, Ibaraki 3058573, JapanUniv Tsukuba, Fac Pure & Appl Sci, Dept Mat Sci, Tsukuba, Ibaraki 3058573, Japan
Komaba, Kyoka
Yonehara, Takuya
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Univ Tsukuba, Fac Pure & Appl Sci, Dept Mat Sci, Tsukuba, Ibaraki 3058573, JapanUniv Tsukuba, Fac Pure & Appl Sci, Dept Mat Sci, Tsukuba, Ibaraki 3058573, Japan
Yonehara, Takuya
Goto, Hiromasa
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机构:
Univ Tsukuba, Fac Pure & Appl Sci, Dept Mat Sci, Tsukuba, Ibaraki 3058573, JapanUniv Tsukuba, Fac Pure & Appl Sci, Dept Mat Sci, Tsukuba, Ibaraki 3058573, Japan
机构:
SRM Univ, Dept Phys, Ctr Mat Sci & Nano Devices, Madras 603203, Tamil Nadu, IndiaSRM Univ, Dept Phys, Ctr Mat Sci & Nano Devices, Madras 603203, Tamil Nadu, India
Alagiri, M.
Ponnusamy, S.
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SRM Univ, Dept Phys, Ctr Mat Sci & Nano Devices, Madras 603203, Tamil Nadu, IndiaSRM Univ, Dept Phys, Ctr Mat Sci & Nano Devices, Madras 603203, Tamil Nadu, India
Ponnusamy, S.
Muthamizhchelvan, C.
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SRM Univ, Dept Phys, Ctr Mat Sci & Nano Devices, Madras 603203, Tamil Nadu, IndiaSRM Univ, Dept Phys, Ctr Mat Sci & Nano Devices, Madras 603203, Tamil Nadu, India