Synthesis of aluminium borate nanowires by sol-gel method

被引:39
|
作者
Wang, J
Sha, J
Yang, Q
Wang, YW
Yang, DR [1 ]
机构
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[2] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China
[3] Zhejiang Univ, Ctr Anal & Measurement, Hangzhou 310027, Peoples R China
基金
中国国家自然科学基金;
关键词
oxides; sol-gel chemistry; electron microscopy; X-ray diffraction;
D O I
10.1016/j.materresbull.2005.04.016
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A sol-gel process followed by annealing was employed to fabricate single crystal aluminium borate (Al4B2O9 and Al18B4O33) nanowires. The diameter of Al4B2O9 nanowires synthesized at 750 degrees C annealing is ranging from 7 to 17 nm, and that of Al18B4O33 nanowires synthesized at 1050 degrees C annealing is about 38 nm. Instead of the well-known vapor-liquid-solid (VLS) mechanism, self-catalytic mechanism was used to explain the growth of the nanowires. (C) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1551 / 1557
页数:7
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