Mechanism of tantalum adhesion on SiLK™ -: art. no. 123501

被引:3
|
作者
Hu, Y
Yang, SW
Chen, XT
Lu, D
Feng, YP
Wu, P
机构
[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
[2] Inst High Performance Comp, Singapore 117528, Singapore
[3] Inst Microelect, Singapore 117685, Singapore
关键词
D O I
10.1063/1.2051792
中图分类号
O59 [应用物理学];
学科分类号
摘要
Tantalum adhesion on SiLK (TM) was investigated using first-principles method based on density functional theory. Phenylene groups were found to play a major role and the adjacent semi-benzene rings also contribute significantly to Ta adhesion on SiLK (TM). In addition, the degradation effects of H-2/He reactive plasma clean on Ta adhesion on SiLK (TM) was investigated. Based on our findings, argon plasma treatment was suggested and implemented after reactive plasma cleaning process, which resulted in integration of SiLK (TM) with Cu up to seven metal layers. (c) 2005 American Institute of Physics.
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页码:1 / 3
页数:3
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