Measurement and simulation of gate voltage dependence of RTS emission and capture time constants in MOSFETs

被引：0
|
作者：
Zanolla, N. [1 ,2 ,3 ]
Siprak, D. [3 ]
Baumgartner, P. [3 ]
Sangiorgi, E. [1 ,2 ]
Fiegna, C. [1 ,2 ]
机构：
[1] Univ Bologna, ARCES DEIS, Via Venezia 52, I-47023 Cesena, Italy
[2] IUNET, Cesena Lab, I-47023 Cesena, Italy
[3] Infineon Technol AG, Neubiberg, Germany
来源：
ULIS 2008: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON | 2008年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Random telegraph signal (RTS) affecting the drain current of small area n-type MOSFETs is extensively investigated. We report measurements and simulations of emission (tau(e)) and capture (tau(c)) time constants as a function of gate voltage for several individual traps. Different models proposed in the literature are applied and compared.
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页码：137 / +
页数：2
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