X-ray diffraction during fixed-incidence reflection. Use of a curved position-sensitive detector CPS 120 INEL

被引:5
|
作者
Guinebretiere, R
Masson, O
Silva, MC
Fillion, A
Surmont, JP
Dauger, A
机构
来源
JOURNAL DE PHYSIQUE IV | 1996年 / 6卷 / C4期
关键词
D O I
10.1051/jp4:1996411
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have realized an X-ray diffraction apparatus equipped with a Curved Position Sensitive Detector to characterize hat plate polycristalline samples. Diffraction patterns are obtained under constant incidence angles ranging from about ten degrees for bulk samples to a few 10(-2) degree to characterize thin films. The aim of this work is to show that such an arrangement allows to obtain diagrams with about the same quality as the symetrical diffraction setting (Bragg Brentano). After a discussion about the specific influence of sample positioning on the d-spacing accuracy, we show the results obtained in the case of cell parameters measurement (NBS silicon standard) and on the other hand, in the case of on the structural Rietveld refinement of a monoclinic zirconia standard powder. Then we utilize this equipment to study three different problems in materials characterization.
引用
收藏
页码:111 / 121
页数:11
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