Electroluminescence of InGaAsSbN quantum well diodes grown on InP substrates

被引：0
|
作者：
Nakagawa, T [1 ]
Kawamura, Y [1 ]
Amano, M [1 ]
Ouchi, K [1 ]
Inoue, N [1 ]
机构：
[1] Osaka Prefecture Univ, Adv Sci & Technol Res Inst, Sakai, Osaka 5998570, Japan
来源：
2004 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2004年
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
InGaAsSbN quantum well diodes operating at 2 g m wavelength region were grown by molecular beam epitaxy (MBE) on InP substrates and their electoroluminescence (EL) properties were studied. The emission wavelength of the EL was 2.15 mu m for the quantum well diode without nitrogen, while the emission wavelength was as long as 2.43 mu m for the quantum well diode with 1.4% nitrogen at room temperature. It was found that the introduction of nitrogen induced a marked reduction of temperature dependence of the band-gap energy of the InGaAsSbN layer.
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页码：643 / 646
页数：4
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