Electroluminescence of InGaAsSbN quantum well diodes grown on InP substrates

被引：0

作者：

Nakagawa, T ^{[1
]}

Kawamura, Y ^{[1
]}

Amano, M ^{[1
]}

Ouchi, K ^{[1
]}

Inoue, N ^{[1
]}

机构：

[1] Osaka Prefecture Univ, Adv Sci & Technol Res Inst, Sakai, Osaka 5998570, Japan

来源：

2004 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

InGaAsSbN quantum well diodes operating at 2 g m wavelength region were grown by molecular beam epitaxy (MBE) on InP substrates and their electoroluminescence (EL) properties were studied. The emission wavelength of the EL was 2.15 mu m for the quantum well diode without nitrogen, while the emission wavelength was as long as 2.43 mu m for the quantum well diode with 1.4% nitrogen at room temperature. It was found that the introduction of nitrogen induced a marked reduction of temperature dependence of the band-gap energy of the InGaAsSbN layer.

引用

页码：643 / 646

页数：4

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