Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films

被引：424

作者：

Bhattacharyya, S ^{[1
]}

Auciello, O ^{[1
]}

Birrell, J ^{[1
]}

Carlisle, JA ^{[1
]}

Curtiss, LA ^{[1
]}

Goyette, AN ^{[1
]}

Gruen, DM ^{[1
]}

Krauss, AR ^{[1
]}

Schlueter, J ^{[1
]}

Sumant, A ^{[1
]}

Zapol, P ^{[1
]}

机构：

[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 10期

关键词：

D O I：

10.1063/1.1400761

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrananocrystalline diamond (UNCD) films with up to 0.2% total nitrogen content were synthesized by a microwave plasma-enhanced chemical-vapor-deposition method using a CH4(1%)/Ar gas mixture and 1%-20% nitrogen gas added. The electrical conductivity of the nitrogen-doped UNCD films increases by five orders of magnitude (up to 143 Ohm (-1) cm(-1)) with increasing nitrogen content. Conductivity and Hall measurements made as a function of film temperature down to 4.2 K indicate that these films have the highest n-type conductivity and carrier concentration demonstrated for phase-pure diamond thin films. Grain-boundary conduction is proposed to explain the remarkable transport properties of these films. (C) 2001 American Institute of Physics.

引用

页码：1441 / 1443

页数：3

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