Phase-field simulation of electric-field-induced in-plane magnetic domain switching in magnetic/ferroelectric layered heterostructures

被引：17
|
作者：
Hu, Jia-Mian [1 ,2 ,3 ]
Sheng, G. [3 ]
Zhang, J. X. [3 ]
Nan, C. W. [1 ,2 ]
Chen, L. Q. [3 ]
机构：
[1] Tsinghua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
[2] Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
[3] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 12期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.3600203
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electric-field-induced in-plane magnetic domain switching in magnetic/ferroelectric (FE) layered heterostructures was studied using phase-field simulations. In particular, we chose the CoFe(2)O(4) (CFO) magnetic film and the Pb(Zn(1/3)Nb(2/3))O(3)-PbTiO(3) (PZN-PT) FE layer as a representative example due to their strong respective magnetoelastic and piezoelectric couplings. In-plane 90 degrees magnetic domain switching in the CFO film was observed when a transverse electric field was applied to the PZN-PT layer. The detailed switching behaviors as well as the corresponding magnetic domain structures are presented for CFO films with different geometric sizes and initial magnetization configurations. The effect of a dynamic electric field on the switching process, i.e., a time-dependent electric-field-induced magnetic domain switching, is also discussed. (c) 2011 American Institute of Physics. [doi:10.1063/1.3600203]
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页数：6
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