Terahertz generation measurements of multilayered GeTe-Sb2Te3 phase change materials

被引：8

作者：

Makino, Kotaro ^{[1
]}

Kato, Kosaku ^{[2
]}

Saito, Yuta ^{[1
]}

Fons, Paul ^{[1
]}

Kolobov, Alexander, V ^{[1
,3
]}

Tominaga, Junji ^{[1
]}

Nakano, Takashi ^{[1
]}

Nakajima, Makoto ^{[2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058565, Japan

[2] Osaka Univ, Inst Laser Engn, Suita, Osaka 5650871, Japan

[3] Herzen State Pedag Univ, Fac Phys, Dept Phys Elect, St Petersburg 191186, Russia

来源：

OPTICS LETTERS | 2019年 / 44卷 / 06期

基金：

日本学术振兴会;

关键词：

DER-WAALS GAPS; OPTICAL RECTIFICATION; RECONFIGURATION; RADIATION; EMISSION;

D O I：

10.1364/OL.44.001355

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Multilayered structures of GeTe and Sb2Te3 phase change material, also referred to as interfacial phase change memory (iPCM), provide superior performance for nonvolatile electrical memory technology in which the atomically controlled structure plays an important role in memory operation. Here, we report on terahertz (THz) wave generation measurements. Three- and 20-layer iPCM samples were irradiated with a femtosecond laser, and the generated THz radiation was observed. The emitted THz pulse was found to be always p polarized independent of the polarization of the excitation pulse. Based on the polarization dependence as well as the flip of the THz field from photoexcited Sb2Te3 and Bi2Te3, the THz emission process can be attributed to the surge current flow due to the built-in surface depletion layer formed in p-type semiconducting iPCM materials. (C) 2019 Optical Society of America

引用

页码：1355 / 1358

页数：4

共 50 条

[21] HEAT-CAPACITY OF TRIPLE INTERMETAL COMPOUNDS OF THE GETE-SB2TE3 SYSTEM
SKUMS, VF
PETROV, GS
KANTOROVICH, II
SKOROPANOV, AS
VECHER, AA
ZHURNAL FIZICHESKOI KHIMII, 1985, 59 (04): : 1032 - 1033
[22] Homologous series of layered tetradymite-like compounds in the Sb-Te and GeTe-Sb2Te3 systems
Shelimova, LE
Karpinskii, OG
Kretova, MA
Kosyakov, VI
Shestakov, VA
Zemskov, VS
Kuznetsov, FA
INORGANIC MATERIALS, 2000, 36 (08) : 768 - 775
[23] Homologous series of layered tetradymite-like compounds in the Sb-Te and GeTe-Sb2Te3 systems
L. E. Shelimova
O. G. Karpinskii
M. A. Kretova
V. I. Kosyakov
V. A. Shestakov
V. S. Zemskov
F. A. Kuznetsov
Inorganic Materials, 2000, 36 : 768 - 775
[24] Structural and electrical properties of layered tetradymite-like compounds in the GeTe-Bi2Te3 and GeTe-Sb2Te3 systems
Shelimova, LE
Karpinskii, OG
Zemskov, VS
Konstantinov, PP
INORGANIC MATERIALS, 2000, 36 (03) : 235 - 242
[25] Pressure-induced amorphization of quasibinary GeTe-Sb2Te3:: The role of vacancies
Kolobov, A. V.
Haines, J.
Pradel, A.
Ribes, M.
Fons, P.
Tominaga, J.
Steimer, C.
Aquilanti, G.
Pascarelli, S.
APPLIED PHYSICS LETTERS, 2007, 91 (02)
[26] Electrical and optical properties of epitaxial binary and ternary GeTe-Sb2Te3 alloys
Jos E. Boschker
Xiang Lü
Valeria Bragaglia
Ruining Wang
Holger T. Grahn
Raffaella Calarco
Scientific Reports, 8
[27] Effects of Ge/Sb Intermixing on the Local Structures and Optical Properties of GeTe-Sb2Te3 Superlattice
Han, Gang
Liu, Furong
TMS 2020 149TH ANNUAL MEETING & EXHIBITION SUPPLEMENTAL PROCEEDINGS, 2020, : 1777 - 1786
[28] THz Pulse Detection by Multilayered GeTe/Sb2Te3
Makino, Kotaro
Kuromiya, Shota
Takano, Keisuke
Kato, Kosaku
Nakajima, Makoto
Saito, Yuta
Tominaga, Junji
Iida, Hitoshi
Kinoshita, Moto
Nakano, Takashi
ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (47) : 32408 - 32413
[29] Interface formation of two- and three-dimensionally bonded materials in the case of GeTe-Sb2Te3 superlattices
Momand, Jamo
Wang, Ruining
Boschker, Jos E.
Verheijen, Marcel A.
Calarco, Raffaella
Kooi, Bart J.
NANOSCALE, 2015, 7 (45) : 19136 - 19143
[30] EFFECTIVE MASSES FOR THE CONDUCTIVITY AND DENSITY OF STATES IN GETE AND SOLID-SOLUTIONS OF THE SYSTEM GETE-SB2TE3
DRABKIN, IA
ZHUKOVA, TB
NELSON, IV
SYSOEVA, LM
INORGANIC MATERIALS, 1979, 15 (07) : 936 - 939

← 1 2 3 4 5 →